NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
2SC2562
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= 0.
4(V)(Max)@IC= 3A ·High Switching Speed ·Complement to Type 2SA1012 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current- Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2562
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.
15A
ICBO
Collector Cutoff Current
VCB= 50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
hFE-2
DC Current Gain
IC= 3A ; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ,RL= 10Ω, IB1= -IB2= 0.
15A,VCC= 30V
MIN TYP.
MAX UNIT
50
V
0.
4
V
1.
2
V
1
μA
1
μA
70
240
30
120
MHz
80
pF
0.
1
μs
1.
0
μs
0.
1
μs
hFE-1 Classifications
O
Y
70-140 120-240
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2562
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
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