NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
Pc
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
5
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2552
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.
2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.
2A
ICBO
Collector Cutoff Current
VCB= 400V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.
1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC≈ 200V, RL= 250Ω, IB1= -IB2= 0.
08A,
2SC2552
MIN MAX UNIT
400
V
500
V
1.
0
V
1.
5
V
100
μA
1.
0
mA
20
8
1.
0
μs
2.
5
μs
1.
0
μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in h...
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