isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
Pc
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2527
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isc Silicon NPN Power Transistor
2SC2527
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0. 5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
Ic= 1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 7. 5A, RL= 4Ω, IB1= -IB2= 0. 75A,
MIN MAX UNIT
120
V
120
V
1. 8
V
1. 7
V
50
μA
50
μA
60
200
40
40
MHz
300
pF
0. 3
μs
1. 3
μs
0. 2
μs
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require speci...
2SC2527 PDF File
