NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1073 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
2SC2523
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 160V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.
0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V; f= 10MHz
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 7.
5A; IB1= -IB2= 0.
75A; RL= 4Ω
2SC2523
MIN TYP.
MAX UNIT
160
V
160
V
7
V
1.
8
V
1.
7
V
50 μA
1
mA
50 μA
60
200
40
180
pF
80
MHz
0.
3
μs
1.
3
μs
0.
2
μs
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2523
NOTICE： ISC reserves the rights to make changes of the conten...
Similar Datasheet
