DatasheetsPDF.com

2SC2460

Part Number	2SC2460
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=...
Datasheet	2SC2460 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.
) ·Complement to Type 2SA1050 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifer and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC2460 isc website：www.
iscsemi.
com 1...

Similar Datasheet

2SC2404 Silicon NPN Transistor - Panasonic Semiconductor
2SC2404 Silicon PNP Transistor - Kexin
2SC2404 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2405 Silicon NPN Transistor - Panasonic Semiconductor
2SC2405 Silicon PNP Transistor - Kexin
2SC2406 Silicon NPN Transistor - Panasonic Semiconductor
2SC2406 Silicon PNP Transistor - Kexin
2SC2407 NPN Silicon Transistor - NEC
2SC2408 Silicon NPN RF Transistor - Inchange Semiconductor
2SC2411 Silicon Transistor - GME

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)