NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
3V(Typ.
)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.
) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage switching, audio frequency power
amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Peak
3.
0
A
PC
Total Power Dissipation@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2344
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2344
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
160
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.
5A; IB= 50mA
0.
5
V
VBE(on) Base-Emitter On Voltage
IC= 10mA; VCE= 5V
1.
5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
10 μA
hFE
DC Current Gain
IC= 0.
3A; VCE= 5V
60
200
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 10V
100
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.
0MHz
23
pF
Switching Times
ton
Turn-On Time
0.
15
μs
tstg
Storage Time
IC= 0.
5A, IB1= -IB2= 50mA
0.
81
μs
tf
Fall Time
0.
48
μs
hFE Classifications
D
E
60-120 100-200
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2344
NOTICE： ISC reserves the rights to make changes of the content her...
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