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2SC2337

Part Number	2SC2337
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=...
Datasheet	2SC2337 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min.
) ·Complement to Type 2SA1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC2337 isc website：www.
iscsemi.
com 1 isc & is...

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