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2SC2335

Part Number	2SC2335
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-E...
Datasheet	2SC2335 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 3A, IB= 0.
6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters,DC-DC and converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7.
0 V IC ...

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