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2SC2275

Part Number	2SC2275
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Good Linearity...
Datasheet	2SC2275 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 3.
0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ T...

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