isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Power Dissipation
PC=10W(Tc=25℃), PC=1. 0W(Ta=25℃) ·High DC Current Gain
: hFE=140~450@VCE=2V,IC=0. 5A hFE=70(Min)@VCE=2V,IC=4A
·Low Collector Saturation Voltage VCE(sat)=1. 0V(Max)@IC=4A,IB=0. 1A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Designed for strobo flash and medimum power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
20
VCES
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
8
IC
Collector Current-Continuous
5
ICM
Collector Current-Peak
8
IE
Emitter Current-Continuous
-5
IEM
Emitter Current-Peak
-8
Collector Power Dissipation @ TC=25℃
10
PC
Collector Power Dissipation @ Ta=25℃
1. 0
UNIT V V V V A A A A
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2270
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isc Silicon NPN Power Transistor
2SC2270
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0. 1A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
IC= 0. 5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0. 5A ; VCE= 2V
Cob
Collector Output Capacitance
VCB=10V,IE=0,f=1MHz
MIN TYP. MAX UNIT
20
V
8
V
1. 0
V
1. 5
V
100 nA
100 nA
140
450
70
100
MHz
40
pF
hFE-1 Classifications
A
B
C
140-240 200-330 300-450
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein ...
2SC2270 PDF File
