DatasheetsPDF.com

2SC2140

Part Number	2SC2140
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Sw...
Datasheet	2SC2140 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature R...

Similar Datasheet

2SC2101 Silicon NPN POWER TRANSISTOR - Toshiba
2SC2101 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2102 SILICON NPN TRANSISTOR - Toshiba
2SC2103A SILICON NPN TRANSISTOR - Toshiba
2SC2104 Silicon NPN Transistor - Toshiba
2SC2105 SILICON NPN TRANSISTOR - Toshiba
2SC2106 Silicon NPN Transistor - Toshiba
2SC2117 SILICON NPN TRANSISTOR - Toshiba
2SC2118 Silicon NPN Transistor - Toshiba
2SC2120 TRANSISTOR - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)