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2SB1607

Part Number	2SB1607
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION ·Large Collector Current ·Satisfactory Linearity of Foward Curren...
Datasheet	2SB1607 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION ·Large Collector Current ·Satisfactory Linearity of Foward Current Transfer Ratio ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.
5V(Max.
)@IC= -5A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Complement to Type 2SD2469 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collect...

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