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2SB1495

INCHANGE
Part Number 2SB1495
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC...
Datasheet PDF File 2SB1495 PDF File

2SB1495
2SB1495

Overview
isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max.
)@IC= -1.
5A ·Complement to Type 2SD2257 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC C...


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