DatasheetsPDF.com

2SB1393

Part Number	2SB1393
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Goo...
Datasheet	2SB1393 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.
) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.
2V(Max,)@ IC= -3A ·Complement to Type 2SD1985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25...

Similar Datasheet

2SB1300 PNP SILICON TRANSISTOR - NEC
2SB1301 PNP SIlicon Transistor - Renesas
2SB1302 PNP Transistor - Sanyo Semicon Device
2SB1302 PNP Epitaxial Planar Silicon Transistors - Kexin
2SB1302 Bipolar Transistor - ON Semiconductor
2SB1308 Power Transistor - Rohm
2SB1308 Power Transistor - GME
2SB1308 PNP Transistor - WILLAS
2SB1308 Plastic-Encapsulated Transistors - TRANSYS
2SB1308 Power Transistor - Kexin

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)