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MJE802

Part Number	MJE802
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V...
Datasheet	MJE802 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.
5A = 100(Min) @ IC= 4A ·Complement to Type MJE702 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.
1 A 4...

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