DatasheetsPDF.com

MJE800

Part Number	MJE800
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Cur...
Datasheet	MJE800 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.
5 A = 100(Min) @ IC= 4A ·Complement to Type MJE700 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.
1 A 40 W 15...

Similar Datasheet

MJE800 NPN Transistor - Fairchild
MJE800 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE800 DARLINGTON POWER TRANSISTORS - ON
MJE800 NPN Transistor - INCHANGE
MJE800 (MJE800 - MJE803) SILICON POWER TRANSISTOR - SavantIC
MJE800 Transistor - Central Semiconductor
MJE800G Plastic Darlington Complementary Silicon Power Transistors - ON Semiconductor
MJE800T NPN Transistor - INCHANGE
MJE800T POWER TRANSISTOR - Central Semiconductor
MJE800T 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)