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2SD1294

Part Number	2SD1294
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain :...
Datasheet	2SD1294 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain : hFE= 2000~20000@ IC= 0.
5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60±15 V VCEO Collector-Emitter Voltage 60±15 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1294...

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