DatasheetsPDF.com

2SC5249

Part Number	2SC5249
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switchin...
Datasheet	2SC5249 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.
5 A 35 W 150 ℃ Tstg Storage Temperature -55~1...

Similar Datasheet

2SC5200 NPN TRANSISTOR - Toshiba Semiconductor
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR - UTC
2SC5200 NPN Epitaxial Silicon Transistor - Fairchild Semiconductor
2SC5200 150 Watt Silicon NPN Power Transistors - Thinki Semiconductor
2SC5200 NPN Transistor - ON Semiconductor
2SC5200 NPN Transistor - STMicroelectronics
2SC5200 NPN Transistor - INCHANGE
2SC5200A Silicon NPN Transistor - JILIN SINO
2SC5200B Silicon NPN Transistor - JILIN SINO
2SC5200H NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)