DatasheetsPDF.com

2SC4793

Part Number	2SC4793
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-...
Datasheet	2SC4793 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
1 A 2 W 2...

Similar Datasheet

2SC4702 NPN TRANSISTOR - Hitachi Semiconductor
2SC4702 NPN Transistor - Renesas
2SC4702 NPN Transistor - Kexin
2SC4703 NPN Transistor - INCHANGE
2SC4703 NPN TRANSISTOR - NEC
2SC4703 NPN SILICON RF TRANSISTOR - CEL
2SC4704 Silicon NPN Transistor - Hitachi Semiconductor
2SC4705 NPN TRANSISTOR - Sanyo Semicon Device
2SC4705 NPN Epitaxial Planar Silicon Transistor - Kexin
2SC4706 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)