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2SB1317

Part Number	2SB1317
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Curr...
Datasheet	2SB1317 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction...

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