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2SB1287

Part Number	2SB1287
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emi...
Datasheet	2SB1287 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.
5V(Max)@ IC= -1A ·Complement to Type 2SD1765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -...

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