isc Silicon PNP Darlington Power Transistor
2SB1223
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1825 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in control of motor drivers, printer
hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-6
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150
℃
isc website：www. iscsemi. com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -4mA
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -2A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -2A; VCE= -5V
2SB1223
MIN TYP. MAX UNIT
-60
V
-70
V
-1. 5
V
-2. 0
V
-100 μA
-3. 0 mA
2000
20
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in h...
2SB1223 PDF File
