PNP Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor
2SB1085
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1562 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-3
A
20 W
1.
5
150
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon PNP Power Transistor
2SB1085
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.
1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.
1A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.
1A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.
1A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
MIN TYP.
MAX UNIT
-120
V
-120
V
-5
V
-2.
0
V
-1.
5
V
-1.
0 μA
-1.
0 μA
60
200
50
MHz
30
pF
hFE Classifications
D
E
60-120 100-200
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equi...
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