PNP Transistor - INCHANGE
Description
isc Silicon PNP Darlingtion Power Transistor
2SB1021
DESCRIPTION ·High DC C urrent Gain-
: hFE= 2000(Min.
)@IC= -3A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1416 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
2
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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iscsemi.
com
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isc Silicon PNP Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
IC= -3A; IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage
IC= -7A; IB= -14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
hFE-2
DC Current Gain
IC= -7A; VCE= -3V
2SB1021
MIN TYP.
MAX UNIT
-80
V
-1.
5
V
-2.
0
V
-2.
5
V
-100 μA
-4.
0
mA
2000
15000
1000
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment...
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