PNP Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-3
A
10 W
1.
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1009
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iscsemi.
com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.
2A
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.
5A; VCE= -5V
hFE Classifications
P
Q
R
82-180 120-270 180-390
2SB1009
MIN TYP.
MAX UNIT
-32
V
-40
V
-5
V
-0.
8
V
-1.
0 μA
-1.
0 μA
82
390
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, ae...
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