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Part Number
|
2SB1007 |
|
Manufacturer
|
INCHANGE |
|
Description
|
PNP Transistor |
|
Datasheet
|
 2SB1007 PDF File
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Overview
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1378 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.
7
A
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
10 W
1
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1007
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -50μA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -100mA; VCE= -3V
hFE Classifications
P
Q
R
82-180 120-270 180-390
2SB1007
MIN TYP.
MAX UNIT
-80
V
-80
V
-5
V
-0.
4 V
-0.
5 μA
-0.
5 μA
82
390
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used i...
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