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2SB829

Part Number	2SB829
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:IC= -15A ·Low Collector Saturation Voltage...
Datasheet	2SB829 PDF File

Overview

isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:IC= -15A ·Low Collector Saturation Voltage : VCE(sat)= -0.
5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Total Power Dissipation...

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