DatasheetsPDF.com

2SB536

Part Number	2SB536
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Co...
Datasheet	2SB536 PDF File

Overview

isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Complement to Type 2SD381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching.
·Suitable for driver of 60~100 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak -3.
0 A IB Base Current -0.
3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Po...

Similar Datasheet

2SB502 PNP Transistor - INCHANGE
2SB502A SILICON PNP TRANSISTOR - Toshiba
2SB503 PNP Transistor - INCHANGE
2SB503A SILICON PNP TRANSISTOR - Toshiba
2SB506 PNP Transistor - INCHANGE
2SB506 SILICON POWER TRANSISTOR - SavantIC
2SB507 PNP Transistor - INCHANGE
2SB507 Silicon PNP Power Transistors - SavantIC
2SB507 PNP Epitaxial Silicon Transistor - GME
2SB507 PNP Transistor - DC COMPONENTS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)