Schottky Rectifier - INCHANGE
Description
High Voltage Power Schottky Rectifier
INCHANGE Semiconductor
STPS20H100CT
FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Forward current
VALUE UNIT
100
V
30
A
IF(AV)
Average Rectified Forward Current Tc=160℃
per diode per device
10 20
A
Nonrepetitive Peak Surge Current
IFSM
8.
3ms single half sine-wave superimposed on rated load conditions
250
A
tp=10 ms sinusoidal
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10000 V/μs
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High Voltage Power Schottky Rectifier
INCHANGE Semiconductor
STPS20H100CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 1.
6
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL VF IR
PARAMETER
CONDITIONS
Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current
IF= 8A ; Tc= 25℃ IF= 8A ; Tc= 125℃ IF= 10A ; Tc= 25℃ IF= 10A ; Tc= 125℃ IF= 16A ; Tc= 25℃ IF=16A ; Tc= 125℃ IF= 20A ; Tc= 25℃ IF=20A ; Tc=125℃
VR= VRWM;Tc= 25℃
VR= VRWM;Tc= 125℃
MAX
0.
71 0.
58 0.
77 0.
64 0.
81 0.
68 0.
88 0.
73
0.
0045
6
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for u...
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