Ultrafast Rectifier - INCHANGE
Description
Ultra fast Rectifier
INCHANGE Semiconductor
60EPF02
FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=106℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 50Hz)
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
200
V
60
A
830
A
-40~150
℃
-40~150
℃
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iscsemi.
com
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Ultra fast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
INCHANGE Semiconductor
60EPF02
MAX 0.
40 40
UNIT ℃/W ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum Instantaneous Forward Voltage IF=60A
1.
3
V
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=25℃ VR= VRWM;Tj=150℃
trr
Maximum Reverse Recovery Time
IF =60A;diF/dt=25A/μs
0.
1 50
mA
180
ns
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no w...
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