Ultrafast Rectifier - INCHANGE
Description
Ultrafast Rectifier
INCHANGE Semiconductor
15ETU12
FEATURES ·1200V blocking voltage ·Ultrafast recovery time ·Optimized forward voltage drop ·Designed and qualified for industrial level ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The devices are intended for use in boost stage in the AC/DC
section of SMPS, high frequency output rectification of battery charger, inverters of solar inverters, or as freewheeling diodes in motor drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=100℃
IFSM
Non- repetitive peak surge current
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
15
A
150
A
-55~150 ℃
-55~150 ℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
Ultrafast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
15ETU12
MAX 1.
3
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF=15A ;Tj=25℃
2.
2
IR
Maximum Instantaneous Reverse Current
VR= VR rated
VR= VR rated Tj=125℃
80 150
trr
Maximum Reverse Recovery Time
IF = 15 A; dIF/dt = 100 A/μs VR = 390 V
167
UNIT V μA ns
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be us...
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