NPN Transistor - INCHANGE
Description
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
MPSA14
DESCRIPTION ·With TO-92 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation
30
V
30
V
10
V
0.
5
A
1.
0
A
1.
5
W
Tj
Max.
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83.
3 ℃/W
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iscsemi.
com
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
MPSA14
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=0.
1A ,IB= 0.
1mA
VBE(on) Base-Emitter on Voltage
IC=0.
1A ,VCE=5V
ICBO
Collector Cutoff Current
VCB=30V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.
1A ; VCE= 5V
MIN
MAX UNIT
30
V
1.
5
V
2.
0
V
0.
1
μA
0.
1
μA
10000
20000
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments,...
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