INCHANGE Semiconductor
isc
Silicon NPN Darlingtion
Power Transistor
MJ3001
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown
Voltage-
V(BR)CEO= 80V(Min) ·Complement to...