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KSE700

Part Number	KSE700
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Low Collector Saturation Voltage ·Complement to Typ...
Datasheet	KSE700 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Low Collector Saturation Voltage ·Complement to Type KSE800 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Monolithic construction with built-in-Base-Emitter resistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KS...

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