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KSC3503

INCHANGE
Part Number KSC3503
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor KSC3503 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Silico...
Datasheet PDF File KSC3503 PDF File

KSC3503
KSC3503


Overview
isc Silicon NPN Power Transistor KSC3503 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.
1 A 7 W 150 ...



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