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KSB596

Part Number	KSB596
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collecto...
Datasheet	KSB596 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.
7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type KSD526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junct...

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