DatasheetsPDF.com

BUL1203E

INCHANGE
Part Number BUL1203E
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
Datasheet PDF File BUL1203E PDF File

BUL1203E
BUL1203E


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
25 ℃/W BUL1203E isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.
2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.
4A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A; IB= 1A ICES Collector Cutoff Current VCE= 1200V; VBE= 0 ICEO Collector Cutoff Current VCE= 550V; IB= 0 hFE-1 DC Current Gain IC= 1mA; VCE= 5V hFE-2 DC Current Gain IC= 10mA; VCE= 5V hFE-3 DC Current Gain IC= 0.
8A; VCE= 3V hFE-4 DC Current Gain IC= 2A; VCE= 5V Switching Times ;Resistive Load ton Turn-on Time ts Storage Time tf Fall Time IC= 2A; IB1= 0.
4A; IB2= -0.
8A; tp= 30μs; VCC= 150V BUL1203E MIN TYP.
MAX UNIT 550 V 0.
5 V 0.
7 V 1.
5 V 1.
5 V 1.
5 V 0.
1 mA 0.
1 mA 10 10 14 32 9 28 0.
5 μs 3.
0 μs 0.
3 μs isc website：www.
iscsemi.
com 2 isc & iscsemi ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)