DatasheetsPDF.com

BUL382D

Part Number	BUL382D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collec...
Datasheet	BUL382D PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 0.
5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 8 A IB Base Current-Continuous 2 A ...

Similar Datasheet

BUL381 NPN POWER TRANSISTOR - STMicroelectronics
BUL381 SILICON POWER TRANSISTOR - SavantIC
BUL381D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUL381D SILICON POWER TRANSISTOR - SavantIC
BUL382 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS - STMicroelectronics
BUL382D NPN Transistor - INCHANGE
BUL38D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUL38D NPN POWER TRANSISTORS - Suntac Electronic
BUL38D Silicon NPN Power Transistors - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)