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BUH417D

Part Number	BUH417D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode ·Minimum L...
Datasheet	BUH417D PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 7 A 55 W 150 ℃ Tstg Storage Temperat...

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