NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
BU2727A
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 825V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of color
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1700
V
VCEO VEBO
IC
Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous
825
V
8
V
12
A
ICM
Collector Current-Peak
IB
Base Current- Continuous
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
30
A
12
A
25
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.
0 ℃/W
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BU2727A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0;
825
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
91A
1.
0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.
91A
0.
95 V
hFE-1
DC Current Gain
IC= 0.
1A; VCE= 5V
12
35
hFE-2
DC Current Gain
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; VCE= 1V
5.
5
VCE= 1700V; VBE= 0 VCE= 1700V; VBE= 0; TC=125℃
VEB= 7.
5V ; IC= 0
11
1.
0 2.
0
mA
1.
0 mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specializ...
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