NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU2527DX
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
30
A
IB
Base Current-Continuous
8
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
12
A
45
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.
8 K/W
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU2527DX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.
6A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.
6A
VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 8A
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
MIN TYP.
MAX UNIT
800
V
7.
5
V
5.
0
V
1.
1
V
1.
0 2.
0
mA
110
mA
11
5
7
10
2.
0
V
145
pF
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
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