NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of large
screen colour television receivers up to 64 KHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCESM VCEO
Collector- Emitter Voltage Peak value
Collector-Emitter Voltage
1500 800
VEBO
Emitter-Base Voltage
7.
5
UNIT V V V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
IB
Base Current- Continuous
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
30
A
8
A
12
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BU2527A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.
0 ℃/W
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iscsemi.
com
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isc Silicon NPN Power Transistor
BU2527A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.
2A
5.
0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 1.
2A
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃
VEB= 7.
5V; IC= 0
1.
3
V
0.
25 2.
0
mA
0.
25 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
6
21
hFE-2
DC Current Gain
COB
Output Capacitance
IC= 6A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz
5
9
145
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment whi...
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