NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
25
A
IB
Base Current- Continuous
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
9
A
45
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
INCHANGE Semiconductor
BU2520AF
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.
8 ℃/W
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU2520AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.
2A
5.
0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 1.
2A
VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃
VEB= 7.
5V ; IC= 0
1.
1
V
1.
0 2.
0
mA
1.
0 mA
hFE-1
DC Current Gain
IC= 0.
1A ; VCE= 5V
13
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
5
9.
5
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
115
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general...
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