DatasheetsPDF.com

BU211

Part Number	BU211
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 600V (Min) ·High Curre...
Datasheet	BU211 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 600V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 85 W 150 ℃ Tstg Storage...

Similar Datasheet

BU2006 (BU2006 - BU2010) Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU2006-E3 Bridge Rectifiers - Vishay
BU2008 (BU2006 - BU2010) Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU2008-E3 Bridge Rectifiers - Vishay
BU2010 (BU2006 - BU2010) Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU2010-E3 Bridge Rectifiers - Vishay
BU202DL Bipolar Junction Transistor - Jingdao
BU204 Silicon NPN Transistor - Toshiba
BU204 NPN Transistor - INCHANGE
BU2040 Serial I/O Expander - Rohm

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)