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BD140

INCHANGE
Part Number BD140
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 6, 2020
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A...
Datasheet PDF File BD140 PDF File

BD140
BD140

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD139 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -100 V -80 V -5 V -1.
5 A -0.
5 A 1.
25 W 12.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W ...


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