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BD131

INCHANGE
Part Number BD131
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 6, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·...
Datasheet PDF File BD131 PDF File

BD131
BD131

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.
) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 70 V 45 V 6 V 3 A 6 A 0.
5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD...


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