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BC807-40

INCHANGE
Part Number BC807-40
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 6, 2020
Detailed Description INCHANGE Semiconductor isc Silicon PNP General Purpose Transistors BC807-40 DESCRIPTION ·High current(max. 500mA) ·Lo...
Datasheet PDF File BC807-40 PDF File

BC807-40
BC807-40

Overview
INCHANGE Semiconductor isc Silicon PNP General Purpose Transistors BC807-40 DESCRIPTION ·High current(max.
500mA) ·Low Voltage(Min.
45V) ·NPN complement BC817-25 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose switching and amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -50 -45 -5 -0.
5 0.
25 150 -65~150 UNIT V V V A W ℃ ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark GE Semiconductor isc Silicon PNP General Purpose Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)* Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -1V ICBO Co...


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