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BC337

Part Number	BC337
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon NPN Transistor DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and re...
Datasheet	BC337 PDF File

Overview

isc Silicon NPN Transistor DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BC337 VALUE UNIT 50 V 45 V 5 V 800 mA 625 mW 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=100μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=500mA ; IB= 50mA VBE(on...

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