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AD149

INCHANGE
Part Number AD149
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 6, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Colle...
Datasheet PDF File AD149 PDF File

AD149
AD149

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
7V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3.
5 A 30 W 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
52 UNIT ℃/W AD149 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specifi...


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