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8050

INCHANGE
Part Number 8050
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 6, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·Low saturation voltag...
Datasheet PDF File 8050 PDF File

8050
8050

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio output stage and converters/inverters circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8050 VALUE UNIT 40 V 25 V 5 V 1.
5 A 0.
3 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 8050 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVCBO Collector-Base Breakdown Voltage IC= 0.
1mA ; IE= 0 40 V BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 25 V BVEBO Emitter-Bas...


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